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HM4260

H&M Semiconductor
Part Number HM4260
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4260 N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to pro...
Datasheet PDF File HM4260 PDF File

HM4260
HM4260

Overview
HM4260 N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =60V,ID =19A RDS(ON) < 11.
5mΩ @ VGS=10V (Typ:9.
1mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability HM4260 Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Marking and pin A...


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