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AFP3415EA

Alfa-MOS
Part Number AFP3415EA
Manufacturer Alfa-MOS
Description P-Channel MOSFET
Published Nov 29, 2018
Detailed Description Alfa-MOS Technology General Description AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Datasheet PDF File AFP3415EA PDF File

AFP3415EA
AFP3415EA

Overview
Alfa-MOS Technology General Description AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 ) AFP3415EA 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.
5A,RDS(ON)=41mΩ@VGS=4.
5V -20V/-3.
4A,RDS(ON)=54mΩ@VGS=2.
5V -20V/-2.
2A,RDS(ON)=70mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current cap...


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