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PE30P12S

semi one
Part Number PE30P12S
Manufacturer semi one
Description P-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PE30P12S P-Channel Enhancement Mode Power MOSFET Description The PE30P12S uses advanced trench technology to provide e...
Datasheet PDF File PE30P12S PDF File

PE30P12S
PE30P12S

Overview
PE30P12S P-Channel Enhancement Mode Power MOSFET Description The PE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.
5V RDS(ON) < 16mΩ @ VGS=-10V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●PWM applications ●Load switch ●Power management Marking and pin assignment SOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Ga...


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