Power MOSFET
Description
DESCRIPTION
The PE4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
●N-Channel VDS = 30V,ID = 8A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V
●P-Channel VDS = -30V,ID = -6A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 42...
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