P-Channel Enhancement Mode Power MOSFET
Description
The PE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalan...
