N-Channel Enhancement Mode Power MOSFET
Description
N-Channel Enhancement Mode Power MOSFET
Description
The PE40N65 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
PE40N65
General Features
● VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche vo...
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