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PE2308A

N-Channel Enhancement Mode Power MOSFET

Description

PE2308A N-Channel Enhancement Mode Power MOSFET Description The PE2308A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 6A RDS(ON) =16m Ω @ VGS=4.5V RDS(O...

semi one

PE2308A PDF File

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