N-Channel Enhancement Mode Power MOSFET
Description
N-Channel Enhancement Mode Power MOSFET
PE3018U
General Features
● VDS = 30V,ID = 0.2A RDS(ON) < 4Ω @ VGS=4.5V RDS(ON) < 8Ω @ VGS=2.5V ESD Rating：HBM 2300V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lLamps, hammers,displ...
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