P-Channel MOSFET
Description
P-Channel 1.8-V (G-S) MOSFET
Si3433BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.042 at VGS = - 4.5 V
- 20 0.057 at VGS = - 2.5 V
0.080 at VGS = - 1.8 V
ID (A) - 5.6 - 4.8 - 4.1
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs: 1.8 V Rated Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6 To...
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