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AFP3679S

Alfa-MOS
Part Number AFP3679S
Manufacturer Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology General Description AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP3679S PDF File

AFP3679S
AFP3679S

Overview
Alfa-MOS Technology General Description AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L ) AFP3679S 30V P-Channel Enhancement Mode MOSFET Features -30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch Load Switch in High Current Applications DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Informa...


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