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AFP1013E

Alfa-MOS
Part Number AFP1013E
Manufacturer Alfa-MOS
Description P-Channel MOSFET
Published Dec 10, 2018
Detailed Description Alfa-MOS Technology General Description AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFP1013E PDF File

AFP1013E
AFP1013E

Overview
Alfa-MOS Technology General Description AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-523 ) AFP1013E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.
6A, RDS(ON)= 800 mΩ@ VGS =-4.
5V -20V/-0.
5A, RDS(ON)= 950 mΩ@ VGS =-2.
5V -20V/-0.
4A, RDS(ON)= 1250 mΩ@ VGS =-1.
8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection ( >2KV ) Diode design–in Low Battery Vol...


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