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AFN1304E

Alfa-MOS
Part Number AFN1304E
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 11, 2018
Detailed Description Alfa-MOS Technology General Description AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN1304E PDF File

AFN1304E
AFN1304E

Overview
Alfa-MOS Technology General Description AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-323 ) AFN1304E 20V N-Channel Enhancement Mode MOSFET Features 20V/1.
8A,RDS(ON)=400mΩ@VGS=4.
5V 20V/1.
5A,RDS(ON)=500mΩ@VGS=2.
5V 20V/1.
2A,RDS(ON)=680mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabil...


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