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AFN1306

Alfa-MOS
Part Number AFN1306
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 11, 2018
Detailed Description Alfa-MOS Technology General Description AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Datasheet PDF File AFN1306 PDF File

AFN1306
AFN1306

Overview
Alfa-MOS Technology General Description AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-323 ) AFN1306 30V N-Channel Enhancement Mode MOSFET Features 30V/1.
5A,RDS(ON)=430mΩ@VGS=4.
5V 30V/1.
2A,RDS(ON)=580mΩ@VGS=2.
5V 30V/0.
6A,RDS(ON)=860mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Net Working System Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Orderi...


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