DatasheetsPDF.com

AFP3415

Alfa-MOS
Part Number AFP3415
Manufacturer Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
Published Dec 11, 2018
Detailed Description Alfa-MOS Technology General Description AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Datasheet PDF File AFP3415 PDF File

AFP3415
AFP3415


Overview
Alfa-MOS Technology General Description AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L ) AFP3415 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.
9A,RDS(ON)=43mΩ@VGS=4.
5V -20V/-3.
4A,RDS(ON)=55mΩ@VGS=2.
5V -20V/-2.
2A,RDS(ON)=75mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capa...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)