IGBT
Description
FMS6G10US60 Compact & Complex Module
August 2005
FMS6G10US60
Compact & Complex Module
Features
Short Circuit Rated 10µs @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 10A High Input Impedance Built-in 3 Phase Rectifier Circuit Fast & Soft Anti-Parallel FWD Built-in NTC Thermistor
Applications
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Similar Datasheet
- FMS6G10US60 IGBT - Fairchild Semiconductor
- FMS6G10US60S IGBT - Fairchild Semiconductor