N-Channel Advanced Power MOSFET
Description
RU30E20H
N-Channel Advanced Power MOSFET
Features
30V/20A, RDS (ON) =4.6mΩ(Typ.)@VGS=10V RDS (ON) =5.8mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V Low On-Resistance ESD Protected Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Applications
Switching Application Systems
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