MOSFET – N-Channel, POWERTRENCH)
150 V, 79 A, 16 mW
FDB2532-F085
Features
RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A Qg (tot) = 82 nC (Typ.), VGS = 10 V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
Applications
DC...
