FQB200N04
N-Channel Enhancement Mode Power MOSFET
Description
The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V
(Typ:2.0mΩ)
● Special process technology for high ESD capability ● High ...
