N-Channel Enhancement Mode Field Effect Transistor
Description
CEM6056L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 14.5A, RDS(ON) = 7.8 mΩ @VGS = 10V. RDS(ON) = 10 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot...
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