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IRFF213

Part Number	IRFF213
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 10, 2019
Detailed Description	~D~~~lJ FIELD EFFECT PONER TRANSISTOR IRFF212,213 1.8 AMPERES 200, 150 VOLTS ROS(ON} = 2.4 n Preliminary This series o...
Datasheet	IRFF213 PDF File

Overview

~D~~~lJ FIELD EFFECT PONER TRANSISTOR IRFF212,213 1.
8 AMPERES 200, 150 VOLTS ROS(ON} = 2.
4 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching -Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL ~ CASE STYLE TO-20SAF (T...

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