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IRFF323

Part Number	IRFF323
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 11, 2019
Detailed Description	~D~~ IRFF322,323 FIELD EFFECT PONER TRANSISTOR 2.0 AMPERES 400, 350 VOLTS . ROS(ON) = 2.5 n Preliminary This series ...
Datasheet	IRFF323 PDF File

Overview

~D~~ IRFF322,323 FIELD EFFECT PONER TRANSISTOR 2.
0 AMPERES 400, 350 VOLTS .
ROS(ON) = 2.
5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL A$ CASE STYLE TO-205AF...

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