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IGT6E11

GE
Part Number IGT6E11
Manufacturer GE
Description Insulated Gate Bipolar Transistor
Published Feb 11, 2019
Detailed Description mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D11,E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) =0.27 il This IGT'II T...
Datasheet PDF File IGT6E11 PDF File

IGT6E11
IGT6E11

Overview
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D11,E11 10 AMPERES 400, 500 VOLTS EQUIV.
ROS(ON) =0.
27 il This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors.
The device design and gate characteristics of the IGT'II Transistor are also similar to power MOSFETS.
An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.
The much lower on-state voltage drop also varies only moderately between 25°C and 150°C offering extended power handling capability.
The IGT'II Transistor is ideal for many high voltage switching applications operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor c...


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