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MURTA30060R

GeneSiC
Part Number MURTA30060R
Manufacturer GeneSiC
Description Silicon Super Fast Recovery Diode
Published Feb 14, 2019
Detailed Description Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Pa...
Datasheet PDF File MURTA30060R PDF File

MURTA30060R
MURTA30060R

Overview
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MURTA30060 thru MURTA300120R VRRM = 600 V - 1200 V IF(AV) = 300 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA30060(R) MURTA300120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 1200 --1200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURTA30060(R) MURTA300120(R) Average forward current (per pkg) IF(AV) TC = 100 °C Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage (per le...


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