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PBSS306NZ

nexperia
Part Number PBSS306NZ
Manufacturer nexperia
Description 5.1A NPN transistor
Published Feb 14, 2019
Detailed Description PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product pro...
Datasheet PDF File PBSS306NZ PDF File

PBSS306NZ
PBSS306NZ

Overview
PBSS306NZ 100 V, 5.
1 A NPN low VCEsat (BISS) transistor Rev.
02 — 11 December 2009 Product data sheet 1.
Product profile 1.
1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PZ.
1.
2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications „ High-voltage DC-to-DC conversion „ High-voltage MOSFET gate driving „ High-voltage motor control „ High-voltage power switches (e.
g.
motors, fans) „ Automotive applications 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO IC ICM RCEsat collector-emitter voltage collector current peak collector current c...


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