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EDC910D-1100-S5

USHIO
Part Number EDC910D-1100-S5
Manufacturer USHIO
Description 910nm High Power TOP LED
Published Feb 15, 2019
Detailed Description Data Sheet EDC910D-1100-S5 rev. B 910nm High Power TOP LED Outline and Internal Circuit (Unit : mm) Features • Chip Ma...
Datasheet PDF File EDC910D-1100-S5 PDF File

EDC910D-1100-S5
EDC910D-1100-S5

Overview
Data Sheet EDC910D-1100-S5 rev.
B 910nm High Power TOP LED Outline and Internal Circuit (Unit : mm) Features • Chip Material : AlGaAs • Chip Dimension : 1000um * 1000um • Number of Chips : 1pce • Peak Wavelength : 910nm typ.
• Lead Frame Die : Ceramics • Lens : Silicone Resin Application Absolute Maximum Ratings (Tc=25°C) Item Symbol Ratings Power Dissipation PD 2500 Forward Current IF 1000 Pulse Forward Current IFP 3000 Reverse Voltage VR 5 Thermal Resistance Rthja 10 Junction Temperature Tj 120 Operating Temperature Topr -40 ~ +100 Storage Temperature Tstg -40 ~ +100 Soldering Temperature TSOL 250 ‡Pulse Forward Current condition : Duty 1% and Pulse Width=10us.
‡Soldering condition : Soldering condition must be completed with 5 seconds at 250°C.
Optical and Electrical Characteristics (Tc=25°C) Parameter Symbol Min Typ Max Unit Forward Voltage VF VFP 1.
8 2.
5 2.
8 V Total Radiated Power PO 850 2300 mW Radiant Intensity IE ...


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