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PBSS4130QA

nexperia
Part Number PBSS4130QA
Manufacturer nexperia
Description NPN transistor
Published Feb 15, 2019
Detailed Description PBSS4130QA 30 V, 1 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low...
Datasheet PDF File PBSS4130QA PDF File

PBSS4130QA
PBSS4130QA

Overview
PBSS4130QA 30 V, 1 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1.
General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBSS5130QA.
2.
Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High energy efficiency due to less heat generation • Reduced Printed-Circuit Board (PCB) area requirements • Solderable side pads • AEC-Q101 qualified 3.
Applications • Loadswitch • Battery-driven devices • Power management • Charging circuits • Power switches (e.
g.
motors, fans) 4.
Quick reference data Table 1.
Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current...


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