High Voltage Power MOSFETs
Description
High Voltage Power MOSFETs
Advance Technical Information
IXTA02N450HV IXTT02N450HV
VDSS ID25
RDS(on)
= 4500V = 200mA ≤ 750Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg
TL TSOLD FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJ...
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