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IXBT12N300

IXYS
Part Number IXBT12N300
Manufacturer IXYS
Description Bipolar MOS Transistor
Published Feb 18, 2019
Detailed Description High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) ≤ ...
Datasheet PDF File IXBT12N300 PDF File

IXBT12N300
IXBT12N300

Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) ≤ 3000V 12A 3.
2V Symbol VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 30Ω Clamped Inductive Load TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 3000 3000 V V ± 20 V ± 30 V 30 A 12 A 100 A ICM = 98 1500 A V 160 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
4g 6g Sym...


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