Bipolar MOS Transistor
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBT12N300 IXBH12N300
VCES = IC110 = VCE(sat) ≤
3000V 12A 3.2V
Symbol
VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA)
PC TJ TJM Tstg TTLSOLD Md Weight
Test Conditions
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient
TC = 25°C
TTCC
= 110°C = 25°C, 1ms
VGE = 15V,...
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