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PBSS306PX

nexperia
Part Number PBSS306PX
Manufacturer nexperia
Description PNP Transistor
Published Feb 25, 2019
Detailed Description PBSS306PX 100 V, 3.7 A PNP low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product pro...
Datasheet PDF File PBSS306PX PDF File

PBSS306PX
PBSS306PX

Overview
PBSS306PX 100 V, 3.
7 A PNP low VCEsat (BISS) transistor Rev.
02 — 11 December 2009 Product data sheet 1.
Product profile 1.
1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS306NX.
1.
2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications „ High-voltage DC-to-DC conversion „ High-voltage MOSFET gate driving „ High-voltage motor control „ High-voltage power switches (e.
g.
motors, fans) „ Thin Film Transistor (TFT) backlight inverter „ Automotive applications 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO IC ICM RCEsat ...


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