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VMO550-01F

IXYS
Part Number VMO550-01F
Manufacturer IXYS
Description MOSFET Module
Published Feb 25, 2019
Detailed Description HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V ID25 = 590 A RDS(on) = 2.1 mW N-Channel Enhancement Mode Preliminar...
Datasheet PDF File VMO550-01F PDF File

VMO550-01F
VMO550-01F

Overview
HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V ID25 = 590 A RDS(on) = 2.
1 mW N-Channel Enhancement Mode Preliminary Data D G KS S E 72873 S D G KS Symbol V DSS VDGR VGS VGSM ID25 I D80 I DM P D TJ T JM T stg V ISOL Md Weight Symbol VDSS VGS(th) I GSS I DSS RDS(on) Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 10 kW Continuous Transient 100 V 100 V ±20 V ±30 V TS = 25°C T S = 80°C T S = 25°C T C = 25°C TS = 25°C pulse width limited by T JM 590 440 2360 2200 1470 -40 .
.
.
+150 150 -40 .
.
.
+125 A A A W W °C °C °C 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Mounting torque (M6) Terminal connection torque (M5) 3000 3600 V~ 2.
25-2.
75/20-25 Nm/lb.
in.
2.
5-3.
7/22-33 Nm/lb.
in.
typical including screws 250 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 0 V, ID = 6 mA VDS = 20 V, ID = 110 mA 100 3 V GS = ±20 V DC, V DS = 0 V = 0.
8 • V DS DSS VGS = 0 V T...


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