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IXTN200N10T

IXYS
Part Number IXTN200N10T
Manufacturer IXYS
Description Power MOSFET
Published Feb 25, 2019
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTN200N10T VDSS...
Datasheet PDF File IXTN200N10T PDF File

IXTN200N10T
IXTN200N10T

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTN200N10T VDSS = 100V ID25 RDS(on) = ≤ 200A 5.
5mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s Maximum Ratings 100 100 V V ±20 V ± 30 V 200 A 100 A 500 A 40 A 1.
5 J 550 W -55 .
.
.
+175 175 -55 .
.
.
+175 °C °C °C 300 °C 2500 3000 ...


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