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HYG110N03LR1S

HUAYI
Part Number HYG110N03LR1S
Manufacturer HUAYI
Description N-Channel Enhancement Mode MOSFET
Published Feb 25, 2019
Detailed Description HYG110N03LR1S N-Channel Enhancement Mode MOSFET Feature z 30V/10A RDS(ON)=8.5mΩ(typ.) @VGS = 10V RDS(ON)=12.5 mΩ(typ.)...
Datasheet PDF File HYG110N03LR1S PDF File

HYG110N03LR1S
HYG110N03LR1S

Overview
HYG110N03LR1S N-Channel Enhancement Mode MOSFET Feature z 30V/10A RDS(ON)=8.
5mΩ(typ.
) @VGS = 10V RDS(ON)=12.
5 mΩ(typ.
) @VGS = 4.
5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP8L Applications z Power Management for DC/DC z Switching Application z Battery Protection Ordering and Marking Information S G110N03 XYMXXXXXX N-Channel MOSFET Package Code S: SOP8L Date Code XYMXXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J...


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