N-Channel Enhancement Mode MOSFET
Description
HYG023N03LR1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS
GDS
GDS
TO-252-2L TO-251-3L
TO-251-3S
Applications
Switching Application Power Manageme...
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