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HYG046N04LQ1C2

HUAYI
Part Number HYG046N04LQ1C2
Manufacturer HUAYI
Description Single N-Channel Enhancement Mode MOSFET
Published Feb 25, 2019
Detailed Description HYG046N04LQ1C2 Single N-Channel Enhancement Mode MOSFET Feature  40V/70A RDS(ON)= 4.3mΩ(typ.)@VGS = 10V RDS(ON)= 6.9m...
Datasheet PDF File HYG046N04LQ1C2 PDF File

HYG046N04LQ1C2
HYG046N04LQ1C2

Overview
HYG046N04LQ1C2 Single N-Channel Enhancement Mode MOSFET Feature  40V/70A RDS(ON)= 4.
3mΩ(typ.
)@VGS = 10V RDS(ON)= 6.
9mΩ(typ.
)@VGS = 4.
5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PPAK5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information Single N-Channel MOSFET C2 G046N04 XXXXXXXXX Package Code C2: PPAK5*6-8L Date Code XXXXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the l...


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