N-Channel Enhancement Mode Field Effect Transistor
Description
YJL02N10A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
100V
2A ＜280 mohm ＜300 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● MSL LEVEL1
Applications
● DC-DC Co...
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