DatasheetsPDF.com

YJD15N10A

Part Number	YJD15N10A
Manufacturer	Yangzhou Yangjie
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Feb 26, 2019
Detailed Description	YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at ...
Datasheet	YJD15N10A PDF File

Overview

YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 15A ＜110 mohm ＜120 mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Single Pulse Avalanche Energy Total Power Dissipation TC=25℃ TC=100℃ Thermal Resistanc...

Similar Datasheet

YJD15N10A N-Channel Enhancement Mode Field Effect Transistor - Yangzhou Yangjie

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)