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YJL03N06A

Yangzhou Yangjie
Part Number YJL03N06A
Manufacturer Yangzhou Yangjie
Description N-Channel Enhancement Mode Field Effect Transistor
Published Feb 26, 2019
Detailed Description YJL03N06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at ...
Datasheet PDF File YJL03N06A PDF File

YJL03N06A
YJL03N06A

Overview
YJL03N06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
5V) 60V 3A ＜100 mohm ＜120 mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power Dissipation @ TC=25℃ Thermal Resistance Junction-to-Ambient B Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM PD RθJA TJ ,TSTG 60 ±20 3 2.
4 12 1.
2 105 -55～+150 V V A A W ℃/ W ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJL03N06A F2 S10.
3000...


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