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YJS12G06A

Yangzhou Yangjie
Part Number YJS12G06A
Manufacturer Yangzhou Yangjie
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 13, 2019
Detailed Description YJS12G06A RoHS   COMPLIANT   N-Channel Enhancement Mode Field Effect Transistor Product Summary ●VDS ●ID(at VGS=10V) ...
Datasheet PDF File YJS12G06A PDF File

YJS12G06A
YJS12G06A

Overview
YJS12G06A RoHS   COMPLIANT   N-Channel Enhancement Mode Field Effect Transistor Product Summary ●VDS ●ID(at VGS=10V) ●RDS(ON)( at VGS=10V) ●RDS(ON)( at VGS=4.
5V) ●100% UIS Tested 100% Rg Tested 100% ▽VDS Tested 60V 12A ＜9.
0mΩ ＜13.
0mΩ Top View General Description ●Split Gate Trench Power MV MOSFET technology ●Low RDS(ON) ●Low Gate Charge ●Optimized for fast-switching applications Applications ●Synchronus Rectification in DC/DC and AC/DC Converters ●Industrial and Motor Drive application ■Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage VDS Gate-source Voltage VGS Drain Current G Pulsed Drain Current C TC=25℃ TC=100℃ Avalanche energ...


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