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YJQ4666B

Yangzhou Yangjie
Part Number YJQ4666B
Manufacturer Yangzhou Yangjie
Description P-Channel Enhancement Mode Field Effect Transistor
Published Mar 13, 2019
Detailed Description YJQ4666B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at V...
Datasheet PDF File YJQ4666B PDF File

YJQ4666B
YJQ4666B

Overview
YJQ4666B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.
5V) ● RDS(ON)( at VGS=-2.
5V) ● RDS(ON)( at VGS=-1.
8V) -16V -7A ＜32 mohm ＜42 mohm ＜60 mohm General Description ● Trench Power LV MOSFET technology ● Low RDS(ON) ● Low Gate Charge Applications ● Battery charge ● Load switching in Cellular handset ● Ultraportable applications ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -16 V Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B Thermal Resistance Jun...


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