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YJL3416A

Yangzhou Yangjie
Part Number YJL3416A
Manufacturer Yangzhou Yangjie
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 13, 2019
Detailed Description YJL3416A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 20V ● ID 6.0A ● ...
Datasheet PDF File YJL3416A PDF File

YJL3416A
YJL3416A

Overview
YJL3416A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 20V ● ID 6.
0A ● RDS(ON)( at VGS=4.
5V) ＜18 mohm ● RDS(ON)( at VGS=2.
5V) ＜22 mohm ● RDS(ON)( at VGS=1.
8V) ＜39 mohm ● ESD Protected Up to 3.
5KV (HBM) General Description ● Trench Power LV MOSFET technology ● High Power and current handing capability Applications ● PWM application ● Load switch ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM PD RθJA TJ ,TSTG 20 ±12 7.
0 5.
6 25 1.
3 96 -55～+150 V V A A W ℃/ W ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) ...


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