DatasheetsPDF.com

GPF5N10

Part Number	GPF5N10
Manufacturer	LITE-ON
Description	N-Channel 100V Enhancement Mode Power MOSFET
Published	Mar 22, 2019
Detailed Description	N-Channel 100V Enhancement Mode Power MOSFET General Description GPF5N10 use advanced LSFGMOS technology to provide low ...
Datasheet	GPF5N10 PDF File

Overview

N-Channel 100V Enhancement Mode Power MOSFET General Description GPF5N10 use advanced LSFGMOS technology to provide low RDS(ON),low gate charge, fast switching and excellent avalanche characteristics.
This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification application.
Features • Low RDS(ON) & FOM • Extremely low switching loss • Excellent stability and uniformity • Easy to drive • Marking: GPF5N10 • Qualified according to AEC-Q101 • Weight: 2070mg • RoHS Compliant GPF5N10 BVDSS=100V RDS(ON) ≦5mΩ@VGS=10V ID,pulse= 390A D:Drain G:Gate S:Source (ITO-220AB) Top View Application • Lighting • Hard switching PWM • Server power supply • Charger ...

Similar Datasheet

GPF5N10 N-Channel 100V Enhancement Mode Power MOSFET - LITE-ON

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)