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M12L2561616A-6TG2S

Part Number	M12L2561616A-6TG2S
Manufacturer	ESMT
Description	4M x 16 Bit x 4 Banks Synchronous DRAM
Published	Mar 24, 2019
Detailed Description	ESMT SDRAM M12L2561616A (2S) 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y JEDEC standard 3.3V power supply y LVTT...
Datasheet	M12L2561616A-6TG2S PDF File

Overview

ESMT SDRAM M12L2561616A (2S) 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y JEDEC standard 3.
3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) y All inputs are sampled at the positive going edge of the system clock y Burst Read single write operation y DQM for masking y Auto & self refresh y 64ms refresh period (8K cycle) y All Pb-free products are RoHS-Compliant ORDERING INFORMATION Product ID M12L2561616A-5TG2S M12L2561616A-6TG2S M12L2561616A-7TG2S M12L2561616A-5BG2S M12L2561616A-6BG2S M12L2561616A-7BG2S Max Freq.
Package Comments 200MHz TSOP II Pb-free 166MHz TSOP II Pb-free 143MHz TSOP II Pb-free 200MHz BGA Pb-free 166MHz BGA Pb-free 143MHz BGA Pb-free GENERAL DESCRIPTION The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits...

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M12L2561616A-6TG2S 4M x 16 Bit x 4 Banks Synchronous DRAM - ESMT

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