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F59L1G81MA-25BIG2Y

Part Number	F59L1G81MA-25BIG2Y
Manufacturer	ESMT
Description	1 Gbit (128M x 8) 3.3V NAND Flash Memory
Published	Mar 24, 2019
Detailed Description	ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Reg...
Datasheet	F59L1G81MA-25BIG2Y PDF File

Overview

ESMT Flash FEATURES z Voltage Supply: 3.
3V (2.
7V~3.
6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.
) - Serial Access: 25ns (Min.
) (3.
3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us - typical - Block Erase time: 3.
5ms - typical z Command/Address/Data Multiplexed I/O Port z Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) Operation Temperature Condition -40°C~85°C 1 Gbit (128M x 8) 3.
3V NAND Flash Memory z Rel...

Similar Datasheet

F59L1G81MA-25BIG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory - ESMT

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