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SFTN540

Winning Team
Part Number SFTN540
Manufacturer Winning Team
Description N-Channel MOSFET
Published Apr 1, 2019
Detailed Description SFTN540 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Abs...
Datasheet PDF File SFTN540 PDF File

SFTN540
SFTN540

Overview
SFTN540 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current TC = 25℃ TC = 100℃ Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM Ptot TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Value 100 ± 20 20 14 110 54 - 55 to + 175 Max.
2.
8 65 Unit V V A A W ℃ Unit K/W K/W Winning Team Dated: 19/01/2017 SFTN540 Characteristics at TJ = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 0.
25 mA Drain-Source Leakage Current at VDS = 100 V at VDS = 80 V, TJ = 150℃ Gate Leakage Current at VGS = ±20 V Gate-Source Threshold Voltage at VDS = VGS, ID = 250 μA Drain-Source On-State Resistance at VGS = 10 V, ID =...


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