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SFTN1180

Winning Team
Part Number SFTN1180
Manufacturer Winning Team
Description N-Channel MOSFET
Published Apr 1, 2019
Detailed Description SFTN1180 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Ab...
Datasheet PDF File SFTN1180 PDF File

SFTN1180
SFTN1180

Overview
SFTN1180 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC(f > 1 Hz) Drain Current Peak Drain Current TC = 25℃ TC = 100℃ Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS VGS ID IDM Ptot TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Value 800 ± 20 ± 30 11 7.
1 33 41 - 55 to + 150 Max.
0.
8 62 Unit V V V A A W ℃ Unit K/W K/W Winning Team Dated: 11/03/2016 Rev: 01 SFTN1180 ...


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