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ISL70023SEH

Part Number	ISL70023SEH
Manufacturer	Intersil
Description	60A Enhancement Mode GaN Power Transistor
Published	Apr 1, 2019
Detailed Description	DATASHEET ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor FN8975 Rev. 2.00 Mar 8, 2018 The I...
Datasheet	ISL70023SEH PDF File

Overview

DATASHEET ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor FN8975 Rev.
2.
00 Mar 8, 2018 The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors.
These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) Low Dose Rate (LDR).
Applications for these devices include commercial aerospace, medical, and nuclear power generation.
GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionall...

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ISL70023SEH 60A Enhancement Mode GaN Power Transistor - Intersil

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