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F50D1G41LB-50YG2ME

Part Number	F50D1G41LB-50YG2ME
Manufacturer	ESMT
Description	1.8V 1 Gbit SPI-NAND Flash Memory
Published	Apr 2, 2019
Detailed Description	ESMT Flash (Preliminary) F50D1G41LB (2M) 1.8V 1 Gbit SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequenc...
Datasheet	F50D1G41LB-50YG2ME PDF File

Overview

ESMT Flash (Preliminary) F50D1G41LB (2M) 1.
8V 1 Gbit SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1.
x2 PROGRAM operation is not defined.
Values 1.
8V x1, x21, x4 50/66MHz 1-bit 20/15ns 1ms (maximum value) 1ms (maximum value) FEATURES Voltage Supply: 1.
8V (1.
7V~1.
95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us Memory Cell: 1bit/Memory Cell Support SPI...

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