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F50L2G41LB-104YG2ME

Part Number	F50L2G41LB-104YG2ME
Manufacturer	ESMT
Description	3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Published	Apr 2, 2019
Detailed Description	ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up...
Datasheet	F50L2G41LB-104YG2ME PDF File

Overview

ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1.
x2 PROGRAM operation is not defined.
F50L2G41LB (2M) 3.
3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Values 3.
3V x1, x21, x4 104MHz 1-bit 9.
6ns 104MT/s 1ms (maximum value) 1ms (maximum value) FEATURES  Voltage Supply: 3.
3V (2.
7V~3.
6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us  Memory Cell: 1bit/Memory Cell  Support SPI-Mode 0 and SPI-Mode 31  Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms  Hardware Data Protection - Program/Erase Lockout During Power Transitions  Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byte -...

Similar Datasheet

F50L2G41LB-104YG2M 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory - ESMT
F50L2G41LB-104YG2ME 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory - ESMT

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