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HY5608A

HOOYI
Part Number HY5608A
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Apr 2, 2019
Detailed Description HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tes...
Datasheet PDF File HY5608A PDF File

HY5608A
HY5608A

Overview
HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.
5 mΩ (typ.
) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems.
Pin Description S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY5608 HY5608 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
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